| PART |
Description |
Maker |
| MMBZ20VAL MMBZ5V6AL MMBZ9V1AL MMBZ33VAL MMBZ10VAL |
TVS 6.0V 24W CA UNI-DIR SOT-23
Zener TVSs
|
DIODES INC
|
| SMAJ85A-13 SMAJ48CA-13 SMAJ8.0A-13 |
TVS UNI-DIR 400W 85V SMA 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
TVS BI-DIR 48V 400W SMA 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
TVS UNI-DIR 8.0V 400W SMA
|
Diodes, Inc.
DIODES INC
|
| ESD11A5.0DT5G ESD11A3.3DT5G |
5V mid capacitance TVS in SOT-1123 UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
Transient Voltage Suppressors ESD Protection Diodes in Ultra Small SOT−1123 Package
|
ON Semiconductor
|
| K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D2632 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| 15SMC68A 1.5SMC10A 1.5SMC100A 1.5SMC8.2A 1.5SMC6.8 |
TVS: Unidirectional
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(?荤┛?靛?9.1V,????荤???????????靛??????
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压9.1V,单向玻璃钝化节点瞬变电压抑制
FLK 14/EZ-DR/1000 KONFEK
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压6.8V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压8.2V,单向玻璃钝化节点瞬变电压抑制
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS/ 6.8 THRU 200 VOLTS
|
Taiwan Semiconductor
Central Semiconductor, Corp.
Central Semiconductor Corp.
Central Semiconductor C...
|
| SD05-7 |
UNI-DIRECTIONAL SURFACE MOUNT TVS
|
Diodes Incorporated
|
| SN74AUC2G66YEPR |
DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, BGA8 DSBGA-8
|
Chipcon
|
| NC7WB126K8 |
DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8
|
FAIRCHILD SEMICONDUCTOR CORP
|
| ADG200BA |
DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, MBCY10
|
ANALOG DEVICES INC
|
| AP883 |
DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDIP14
|
VISHAY SILICONIX
|
| ADG722BRM-REEL |
CMOS, Low Voltage, 4 O Dual SPST Switch in 3 mm × 2 mm LFCSP; Package: MSOP; No of Pins: 8; Temperature Range: Industrial DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8
|
Analog Devices, Inc.
|
